
常凯(全职)
研究员
量子物态研究部
Office 545
Email: changkai@baqis.ac.cn
研究团队: 低维量子材料研究团队
常凯,2009年于山东大学物理与微电子学院获物理学学士学位,2015年于清华大学物理系获物理学博士学位,在德国马克斯·普朗克微结构物理研究所开展博士后研究工作至2019年底,随后加入北京量子信息科学研究院,任研究员,量子物态科学研究部低维量子材料团队负责人,截至2022年初,已在Science、Rev. Mod. Phys.、Phys. Rev. Lett.、Adv. Mater.等顶尖期刊上发表论文25篇,被引2600余次,H因子为15。常凯研究员致力于二维铁电铁磁材料、拓扑材料、非常规超导材料等低维量子材料的分子束外延生长(MBE)和扫描隧道显微学(STM)研究,其团队正在搭建超低温MBE-STM实验室和光学二次谐波表征实验室,团队目前的研究工作集中于二维铁电铁磁材料异质结与超晶格对拓扑和超导电子态的调控效应。
代表性工作列表(*为通讯作者)
学术论文
1. K. Chang*, J. W. D. Villanova, J.-R. Ji, S. Das, F. Küster, S. Barraza-Lopez*, P. Sessi*, S. S. P. Parkin*, Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures. Adv. Mater. 33, 2102267 (2021). doi:10.1002/adma.202102267
2. S. Barraza-Lopez*, B. M. Fregoso, J. W. Villanova, S. S. P. Parkin, K. Chang*, Colloquium: Physical properties of group-IV monochalcogenide monolayers. Rev. Mod. Phys. 93, 011001 (2021). doi:10.1103/RevModPhys.93.011001
3. G. Li*, J. Huang, Q. Yang, L. Zhang, Q. Mu, Y. Sun, S. Parkin, K. Chang*, C. Felser*, MoS2 on topological insulator Bi2Te3 thin films: Activation of the basal plane for hydrogen reduction. J. Energy Chem. 62, 516-522 (2021). doi:10.1016/j.jechem.2021.04.010
4. A. Bedoya-Pinto*, J.-R. Ji, A. Pandeya, P. Gargiani, M. Valvidares, P. Sessi, F. Radu, K. Chang*, and S. S. P. Parkin*. Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer. Science 374, 616-620 (2021). doi:10.1126/science.abd5146
5. K. Chang*, F. Küster, B. J. Miller, J.-R. Ji, J.-L. Zhang, P. Sessi, S. Barraza-Lopez, and S. S. P. Parkin*. Microscopic manipulation of ferroelectric domain walls in SnSe monolayers at room temperature. Nano Lett. 20, 6590-6597 (2020). doi:10.1021/acs.nanolett.0c02357
6. K. Chang* and S. S. P. Parkin*. Experimental formation of monolayer group-IV monochalcogenides. J. Appl. Phys. 127, 220902 (2020). (Invited Review) doi:10.1063/5.0012300
7. S.-Y. Yang, K. Chang*, and S. S. P. Parkin*. Large planar Hall effect in bismuth thin films. Phys. Rev. Research 2, 022029(R) (2020). doi:10.1103/PhysRevResearch.2.022029
8. K. Chang, B. J. Miller, H. Yang, H. Lin, S. S. P. Parkin*, S. Barraza-Lopez, Q.-K. Xue, X. Chen*, and S.-H. Ji*. Standing waves induced by valley-mismatched domains in ferroelectric SnTe monolayers. Phys. Rev. Lett. 122, 206402 (2019). doi:10.1103/PhysRevLett.122.206402
9. K. Chang and S. S. P. Parkin*. The growth and phase distribution of ultrathin SnTe on graphene. APL Materials 7, 041102 (2019). doi:10.1063/1.5091546
10. H. Shen*, J. Liu, K. Chang, and L. Fu, In-Plane Ferroelectric Tunneling Junction. Phys. Rev. Applied 11, 024048 (2019). doi:10.1103/PhysRevApplied.11.024048
11. K. Chang, T. P. Kaloni, H. Lin, A. Bedoya-Pinto, A. K. Pandeya, I. Kostanovskiy, K. Zhao, Y. Zhong, X. Hu, Q.-K. Xue, X. Chen, S.-H. Ji, S. Barraza-Lopez, and S. S. P. Parkin*. Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure. Adv. Mater. 31, 1804428 (2019). doi:10.1002/adma.201804428
12. K. Chang, J. Liu, H. Lin, N. Wang, K. Zhao, A. Zhang, F. Jin, Y. Zhong, X. Hu, W. Duan, Q. Zhang, L. Fu, Q.-K. Xue, X. Chen*, and S.-H. Ji*. Discovery of robust in-plane ferroelectricity in the atomic-thick SnTe. Science 353, 274 (2016). doi:10.1126/science.aad8609
13. See also the perspective: B. J. Kooi and B. Noheda, Ferroelectric chalcogenides — materials at the edge. Science 353, 221 (2016). doi:10.1126/science.aaf9081
14. K. Chang, P. Deng, T. Zhang, H.-C. Lin, K. Zhao, S.-H. Ji*, L.-L. Wang, K. He, X.-C. Ma, X. Chen*, and Q.-K. Xue*. Molecular beam epitaxy growth of superconducting LiFeAs film on SrTiO3(001) substrate. EPL 109, 28003 (2015). doi:10.1209/0295-5075/109/28003
学术论著
A. Bedoya-Pinto*, K. Chang, M. G. Samant, Material Preparation/Thin Film Growth. ? Springer Nature Switzerland AG 2021, M. Coey, S. Parkin (eds.), Handbook of Magnetism and Magnetic Materials. doi:10.1007/978-3-030-63101-7_23-1
发明专利
J. Liu, K. Chang, S.-H. Ji, X. Chen, and L. Fu. Apparatus and methods for memory using in-plane polarization. US patent, No.: US 9,959,920 B2. Date of patent: May 1, 2018.